@Article{UedaReGuBeAbBe:2001:HiDoNi,
               author = "Ueda, Mario and Reuther, H. and Gunzel, R. and Beloto, Antonio 
                         Fernando and Abramof, Eduardo and Berni, Luis Angelo",
          affiliation = "Instituto Nacional de Pesquisas Espaciais, Laborat{\'o}rio 
                         Associado de Plasmas, (INPE, LAP)",
                title = "High dose nitrogen and carbon shallow implantation in Si by plasma 
                         immersion ion implantation",
              journal = "Nuclear Instruments and Methods in Physics Research Section B: 
                         Beam Interactions with Materials and Atoms",
                 year = "2001",
               volume = "175-177",
                pages = "715--720",
                month = "Apr",
             keywords = "Plasma immersion ion implantation, Silicon nitride, Silicon 
                         carbide.",
             abstract = "We have performed plasma immersion ion implantation (PIII) 
                         processing to dope Si (0 0 1) wafers with nitrogen and carbon at 
                         high doses, relying on two different PIII systems: one at the 
                         Institute for Ion Beam Physics at Dresden and the other at INPE. 
                         In the first system based on an ECR plasma source, we carried out 
                         nitrogen and carbon implantation in Si samples at 35 keV, with 
                         delivered doses (DD) ranging from 0.6×1017 to 3.1×1018 
                         cm\−2. On the other hand, nitrogen implantation in Si 
                         samples at 12 keV with doses from 1.2×1017 to 2.4×1018 
                         cm\−2 were conducted in the second system with a glow 
                         discharge plasma source. Surface characterizations of these 
                         samples based on Auger electron spectroscopy (AES), surface 
                         profiler, Fourier transform infrared (FTIR) spectroscopy and a 
                         high-resolution X-ray diffractometer indicated different implanted 
                         profiles, maximum implanted depths, stresses and etching depths, 
                         as well as characteristic surface colors, depending on the doped 
                         species, energies and used delivered doses. Comparisons of these 
                         results and their interrelationship are discussed in this paper.",
           copyholder = "SID/SCD",
                 issn = "0168-583X and 0167-5087",
             language = "en",
           targetfile = "59.pdf",
        urlaccessdate = "04 maio 2024"
}